Manufacturer	Samsung
Part Number	MZ-V7P1T0E
Drive Capacity	1TB
NAND	Samsung V-NAND 2-bit MLC
Performance	Max Sequential Read Speed Up to 3,500 MB/s Max Sequential Write Speed Up to 2,700 MB/s Random Read Speed Up to 500,000 IOPS Random Write Speed Up to 500,000 IOPS
Type	M.2 2280
Interface	PCI-E 3.0 x4
Encryption	AES 256-bit (Class 0) TCG/Opal, IEEE1667 (Encrypted drive)
Power Consumption	Average: 5.2W Maximum: 8.5W Idle: 30mW Sleep: 5mW
Dimensions	80.15 x 22.15 x 2.38 mm
Life Expectancy	MTTF: 1,500,000 Hours
Environmental	Operating Temperature: 0°C - 70°C
Warranty	5-Year Manufacturer's Limited Warranty 1,200 TBW (Terabytes Written)